OVERVIEW

This project aims to evaluate the performance, reliability, and functionality of MRAM technology using an MRAM evaluation kit (M3016-EVK) through a series of targeted experiments. Key tests include retention testing to assess data stability over time, endurance testing to determine write cycle limits, and error rate analysis to evaluate bit-error rates. Additionally, power consumption, read/write latency, and temperature stability will be analyzed to understand the MRAM's efficiency and robustness under various conditions.

Objective

The primary objective of this thesis is to perform a comprehensive set of experiments on the M3016-EVK MRAM evaluation board to understand key performance metrics, reliability factors, and endurance characteristics of MRAM cells. Specifically, the thesis will aim to:
     •     Evaluate data retention capabilities over time and under different environmental conditions.
     •     Measure read/write latency and assess power consumption during various operations.
     •     Determine endurance through multiple write/erase cycles.
     •     Investigate the error rates and switching times of the Magnetic Tunnel Junction (MTJ).
     •     Assess temperature stability and soft error resilience.

Project requirements

•    C/C++: Familiarity with C/C++ programming language.
•    Arduino: Familiarity with Arduino programming and its different functions.
•    Digital electronics: Basics of electronics such as transistor and logic gates structure and functionality.