Chair of Dependable Nano Computing (CDNC)
Gabriel Cadilha Marques

Dr.-Ing. Gabriel Cadilha Marques

Short Bio

Gabriel Cadilha Marques received from the Technische Hochschule Nürnberg Georg Simon Ohm his B.Eng. and M.Eng. degrees in Electrical Engineering and in Electronic and Mechatronic Systems respectively. He obtained his PhD (Dr.-Ing.) degree from the Karlsruhe Institute of Technology (KIT) in April 2020, with his dissertation "Circuit Design and Compact Modeling in Printed Electronics Based on Inorganic Materials", supervised by Prof. Mehdi Tahoori and Prof. Jasmin Aghassi-Hagmann. His current research interests are in circuit design methodologies suitable for printed electronics, oxide electronics and electrolyte-gated systems.
He is working currently at the Institute of Nanotechnology.

 

Publications:

21. G. C. Marques, "Circuit Design and Compact Modeling in Printed Electronics Based on Inorganic Materials", Karlsruher Institut für Technologie (KIT), 2020. [10.5445/IR/1000118801]

20. A. T. Erozan, D. Weller, G., Y. Feng, G. C. Marques, J. Aghassi-Hagmann, M. B. Tahoori, "A Printed Camouflaged Cell against Reverse Engineering of Printed Electronics Circuits", in IEEE Transactions on Very Large Scale Integration Systems (TVLSI), 2020.

19. F. Neuper, G. C. Marques, S. A. Singaraju, R. Kruk, J. Aghassi-Hagmann, H. Hahn, and B. Breitung, “ALD-Derived, Low-Density Alumina as Solid Electrolyte in Printed Low-Voltage FETs”, IEEE Transactions on Electron Devices (TED), 2020.

18. G. C. Marques, A. Birla, A. Arnal, S. Dehm, E. Ramon, M. B. Tahoori, and J. Aghassi-Hagmann, “Printed Logic Gates Based on Enhancement- and Depletion-Mode Electrolyte-Gated Transistors”, IEEE Transactions on Electron Devices (TED), vol. 67, no. 8, 2020.

17. S. A. Singaraju, G. C. Marques, P. Gruber, R. Kruk, H. Hahn, B. Breitung, and J. Aghassi-Hagmann, "Fully Printed Inverters using Metal‐Oxide Semiconductor and Graphene Passives on Flexible Substrates”, Physica Status Solidi – Rapid Research Letters (RRL), 2000252, 2020.

16. G. C. Marques, AM Sukuramsyah, AA Rus, S Bolat, A Aribia, X Feng, S. Abhishek Singaraju, E. Ramon, Y. Romanyuk, M. Tahoori, J. Aghassi-Hagmann, "Fabrication and Modeling of pn-Diodes Based on Inkjet Printed Oxide Semiconductors", IEEE Electron Device Letters 41 (1), 187-190, 2020.

15. J. Jeong, G. C. Marques, X. Feng, D. Boll, S. A. Singaraju, J. AghassiHagmann, H. Horst, B. Breitung "InkJet Printable, SelfAssembled, and Chemically Crosslinked IonGel as Electrolyte for Thin Film, Printable Transistors", in Advanced Materials Interfaces, 2019.

14. X. Feng,  G. C. Marques, F. Rasheed, M. B. Tahoori, and J. Aghassi-Hagmann "Non-Quasi-Static Capacitance Modeling and Characterization for Printed Inorganic Electrolyte-gated Transistors in Logic Gates", in IEEE Transactions on Electron Devices (TED), 2019.

13. X. Feng, C. Punckt , G. C. Marques, M. Hefenbrock, M. B. Tahoori, and J. Aghassi-Hagmann "Impact of intrinsic capacitances on the dynamic performance of printed electrolyte-gated inorganic field effect transistors", in IEEE Transactions on Electron Devices (TED), 2019.

12. G. C. Marques, F. von Seggern, S. Dehm, B. Breitung, H. Hahn, S. Dasgupta, M. B. Tahoori, and J. Aghassi-Hagmann, “Influence of Humidity on the Performance of Composite Polymer Electrolyte-Gated Field-Effect Transistors and Circuits”, IEEE Transactions on Electron Devices (TED), 2019.

11. G.C. Marques, D.Weller, A. T. Erozan, X. Feng, M. Tahoori, and J. Aghassi-Hagmann, “Progress Report on ‘From printed electrolyte-gated metal-oxide devices to circuits'”, Advanced Materials, 2019.

10. A. T. Erozan, G.C. Marques, M.S. Golanbari, R. Bishnoi, S. Dehm, J. Aghassi-Hagmann, M. B. Tahoori, "Inkjet Printed EGFET-based Physical Unclonable Function - Design, Evaluation, and Fabrication​", in IEEE Transactions on Very Large Scale Integration Systems (TVLSI), 2018

9. D. Weller, G. C. Marques, J. Aghassi-Hagmann, and M.B. Tahoori, "An Inkjet Printed Low-Voltage Latch based on Inorganic Electrolyte-Gated Transistors", in Electron Device Letters, IEEE, 2018.

8. S. K. Garlapati, G. C. Marques, J. S. Gebauer, S. Dehm, M. Bruns, M. Winterer, M. B. Tahoori, J. Aghassi-Hagmann, H. Hahn and S. Dasgupta, „High performance printed oxide field-effect transistors processed using photonic curing“, Nanotechnology, vol. 29, no. 23, pp. 235205, 2018.

7. X. Feng, G. C. Marques, F. Rasheed, M. B. Tahoori and J. Aghassi, "Analog Properties of Printed Electrolyte-Gated FETs based on Metal Oxide Semiconductors", in 59. MPC Workshop, IEEE German Section Solid-State Circuit Society, 2018 Germany. (Best Paper Award).

6. F. Rasheed, M. S. Golanbari, G. C. Marques, M. Tahoori and J. Aghassi-Hagmann, "A Smooth EKV-based DC Model for Accurate Simulation of Printed Transistors and their Process Variations",  in IEEE Transactions on Electron Devices (TED), 2018.

5. G. C. Marques, F. Rasheed, B. Breitung, H. Hahn, M. Tahoori and J. Aghassi-Hagmann, “Modeling and Characterization of Low Voltage, Inkjet Printed Devices and Circuits”, in Proceedings of the Large-area, Organic & Printed Electronics Convention (LOPEC), 2018, München.

4. G. C. Marques, F. Rasheed, J. Aghassi-Hagmann and M.B. Tahoori, "From Silicon to Printed Electronics: A Coherent Modeling and Design Flow  Approach Based on Printed Electrolyte Gated FETs", in Proceedings of the Asia and South Pacific Design Automation Conference (ASPDAC), 2018, Korea. (Invited Paper)

3. G. C. Marques, S. K. Garlapati, S. Dehm, S. Dasgupta, H. Hahn, M. Tahoori, and J. Aghassi-Hagmann, “Digital power and performance analysis of inkjet printed ring oscillators based on electrolyte-gated oxide electronics”, Applied Physics Letters (APL), vol. 111, no. 10, pp. 102103, 2017.

2. G. C. Marques, S. K. Garlapati, D. Chatterjee, S. Dehm, S. Dasgupta, J. Aghassi, and M. B. Tahoori, “Electrolyte-Gated FETs Based on Oxide Semiconductors: Fabrication and Modeling”, IEEE Transactions on Electron Devices, vol. 64, no. 1, pp. 279-285,  2017.

1. G. C. Marques, S. K. Garlapati, S. Dehm, S. Dasgupta, J. Aghassi and M. B. Tahoori, "Compact modeling of inkjet printed, high mobility, electrolyte-gated transistors", in 55. MPC Workshop, IEEE German Section Solid-State Circuit Society, 2016 Germany. (Best Paper Award).