Sina

M.Sc. Sina Bakhtavari Mamaghani

Short Bio

Sina Bakhtavari Mamaghani received his B.Sc. (2018) and M.Sc. (2021) degrees as a top-ranked student from the Departments of Electrical Engineering and Computer Science and Engineering at Shahid Beheshti University, Tehran, Iran. Since February 2022, he has been a Ph.D. student at the CDNC group of Prof. Mehdi Tahoori at KIT University, Karlsruhe, Germany. His research interests include the reliability and testability of emerging memory technologies.

Publications

Patents
J. Yun, M. Keim, S. B. Mamaghani, C. Münch, and M. Tahoori
Memory built-in self-test with automated detection of magnetic tunnelling junction degradation for repair
US patent, PCT/US2023/018666, submitted 2023.
Conferences
S. B. Mamaghani, J. Yun, M. Keim, and M. Tahoori
MBIST-guided Reliability Improvement Scheme for SRAM-based Computation in Memory
2025 IEEE European Test Symposium (ETS), May 26 2025.
S. B. Mamaghani, J. Yun, M. Keim, and M. Tahoori
MBIST-based MRAM defect screening for safety-critical applications
2024 IEEE International Test Conference (ITC), Nov 3 2024.
J. Yun, S. B. Mamaghani, M. Tahoori, C. Münch, and M. Keim
MBIST-based weak bit screening method for embedded MRAM,
2024 IEEE European Test Symposium (ETS), May 10 2024.
S. B. Mamaghani, J. Yun, M. Keim, and M. Tahoori
Multi-Level Reference for Test Coverage Enhancement of Resistive-Based NVM
2024 IEEE 42nd VLSI Test Symposium (VTS), Apr 22 2024.
Priyanjana Pal♣, Haibin Zhao♣, Maha Shatta♣, Michael Hefenbrock, Sina Bakhtavari Mamaghani, Sani Nassif, Michael Beigl, Mehdi B. Tahoori
Analog Printed Spiking Neuromorphic Circuit
in 27th Design, Automation and Test in Europe Conference (DATE'24), 2024.
S. B. Mamaghani, C. Münch, J. Yun, M. Keim, and M. B. Tahoori
Smart Hammering: A practical method of pinhole detection in MRAM memories
2023 Design, Automation, Test in Europe Conference Exhibition (DATE), Apr 2023.
Sina Bakhtavari Mamaghani, Priyanjana Pal, Mehdi Baradaran Tahoori
A Dynamic Testing Scheme for Resistive-Based Computation-In-Memory Architectures
in 29th Asia and South Pacific Design Automation Conference, ASP-DAC, 2024.
Former Publications
S. Bakhtavari Mamaghani, M. H. Moaiyeri, and G. Jaberipur,
Design of an efficient fully nonvolatile and radiation-hardened majority-based magnetic full adder using FinFET/MTJ
Microelectronics Journal, vol. 103. Elsevier BV, Sep. 2020.
S. Bakhtavari Mamaghani, F. Eslaminasab, and A. Yazdanpanah Goharrizi
Armchair graphene nanoribbons: A synthesis precision study
2017 Iranian Conference on Electrical Engineering (ICEE), Tehran, Iran, May 2017
R. Rajaei and S. Bakhtavari Mamaghani
A Nonvolatile, Low-Power, and Highly Reliable MRAM Block for Advanced Microarchitectures
IEEE Transactions on Device and Materials Reliability, vol. 17, no. 2, pp. 472–474, Jun. 2017.
R. Rajaei and S. Bakhtavari Mamaghani
Ultra-Low Power, Highly Reliable, and Nonvolatile Hybrid MTJ/CMOS Based Full-Adder for Future VLSI Design
IEEE Transactions on Device and Materials Reliability, vol. 17, no. 1, pp. 213–220, Mar. 2017
R. Rajaei, S. Bakhtavari Mamaghani, and F. Eslaminasab
Radiation Hardening by Design for Nonvolatile Magnetic Flip-Flops
The 1st International Conference on New Research Achievements in Electrical and Computer Engineering (ICNRAECE), Tehran, Iran, 2016.
Best Paper award