Farhan was born in Karachi, Pakistan. He received his bachelor degree in Electronics Engineering from Usman Institute of Technology (Hamdard University) in 2012. He then started Masters of Nanoelectronic Systems at TU Dresden and completed his degree in September 2016. During his master studies he worked as a student in Globalfoundries and later he did his master thesis in cooperation with X-FAB Dresden. Since January 2017, he is a Scholarship PhD student working on a MERAGEM project (Modeling, Design, Realization and Automation of Printed Electronics and its Materials) at ITEC/CDNC group of Prof. Tahoori at Karlsruhe Institute of Technology. His research interest includes design automation and Process Design Kit (PDK) development.
5. F. Rasheed, M. Hefenbrock, M. Beigl, M. Tahoori and J. Aghassi-Hagmann, "Variability Modeling for Printed Inorganic Electrolyte-Gated Transistors and Circuits", in Special Issue of IEEE Transactions on Electron Devices (TED), 2018.
4. X. Feng, G. C. Marques, F. Rasheed, M. B. Tahoori and J. Aghassi, "Analog Properties of Printed Electrolyte-Gated FETs based on Metal Oxide Semiconductors", in 59. MPC Workshop, IEEE German Section Solid-State Circuit Society, 2018 Germany. (Best Paper Award).
3. F. Rasheed, M. S. Golanbari, G. C. Marques, M. Tahoori and J. Aghassi-Hagmann, "A Smooth EKV-based DC Model for Accurate Simulation of Printed Transistors and their Process Variations", in IEEE Transactions on Electron Devices (TED), 2018.
2. G. C. Marques, F. Rasheed, B. Breitung, H. Hahn, M. Tahoori and J. Aghassi-Hagmann, “Modeling and Characterization of Low Voltage, Inkjet Printed Devices and Circuits”, in Proceedings of the Large-area, Organic & Printed Electronics Convention (LOPEC), 2018, München.
1. G. C. Marques, F. Rasheed, J. Aghassi-Hagmann and M.B. Tahoori, "From Silicon to Printed Electronics: A Coherent Modeling and Design Flow Approach Based on Printed Electrolyte Gated FETs", in Proceedings of the Asia and South Pacific Design Automation Conference (ASPDAC), 2018, Korea. (Invited Paper)
“Analysis and modification of a single cell non-volatile memory structure for analog trimming purposes based on a floating gate topology realized using a standard mixed signal 0.35µm CMOS technology.”
TU Dresden/X-FAB Semiconductors, Dresden, Germany, 2016.
“Human Guider Robot”
Usman Institute of Technology (Hamdard University), Karachi, Pakistan 2012.